Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-17 - C3-23
DOI http://dx.doi.org/10.1051/jp4:1993302
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-17-C3-23

DOI: 10.1051/jp4:1993302

Modelling of CVD reactors : thermochemical and mass transport approaches for Si1-xGex deposition

H. ROUCH1, M. PONS2, A. BENEZECH2, J.N. BARBIER3, C. BERNARD3 and R. MADAR1

1  LMGP/ENSPG/INPG, Domaine Universitaire, BP. 46, 38402 Saint-Martin d'Hères, France
2  S2MC/ENSEEG/INPG, Domaine Universitaire, BP. 75, 38402 Saint-Martin d'Hères, France
3  LTPCM/ENSEEG/INPG, Domaine Universitaire, BP. 75, 38402 Saint-Martin d'Hères, France


Abstract
Over the years, the design of chemical vapor deposition processes has relied on accumulated empirical ability. It is now well established that the properties of films grown by this chemical process are strongly determined by both transport phenomena and homogeneous and heterogeneous reactions in the reactor. Thermodynamic calculations and mass transport modeling provide a possible approach to delineate the general features of a given process. The application of this concept to the deposition of Si1-xGex alloys has led to a better knowledge of the physicochemical phenomena involved in the growth of these materials.



© EDP Sciences 1993