Numéro
J. Phys. IV France
Volume 03, Numéro C2, Juillet 1993
International Workshop on Electronic Crystals
ECRYS - 93
Page(s) C2-255 - C2-258
DOI http://dx.doi.org/10.1051/jp4:1993251
International Workshop on Electronic Crystals
ECRYS - 93

J. Phys. IV France 03 (1993) C2-255-C2-258

DOI: 10.1051/jp4:1993251

Temperature dependence of the Peierls gap in (TaSe4)2I

D. BERNER1, G. SCHEIBER1, A. GAYMANN1, H.M. GESERICH1, P. MONCEAU2 and F. LÉVY3

1  Institut für Angewandte Physik, Universität Karlsruhe, Kaiserstr. 12, 76131 Karlsruhe, Germany
2  Centre de Recherches sur les Très Basses Températures, CNRS, BP.166X, 38042 Grenoble cedex, France
3  Institut de Physique Appliquée, EPF de Lausanne, PHB Ecublens, 1015 Lausanne, Switzerland


Abstract
We have determined the longitudinal optical conductivity of (TaSe4)2I in the energy range from 50 meV to 2 eV at different temperatures between 15 K and 420 K. We find a clear evidence that the free carriers are condensed into a charge density wave ground state not only below the transition temperature of 263 K but also at higher temperature up to the limits of the chemical stability of this compound.



© EDP Sciences 1993