Numéro
J. Phys. IV France
Volume 03, Numéro C2, Juillet 1993
International Workshop on Electronic Crystals
ECRYS - 93
Page(s) C2-189 - C2-192
DOI http://dx.doi.org/10.1051/jp4:1993238
International Workshop on Electronic Crystals
ECRYS - 93

J. Phys. IV France 03 (1993) C2-189-C2-192

DOI: 10.1051/jp4:1993238

Spontaneous resistance fluctuations and their evolution near the threshold in o-TaS3 below the liquid-nitrogen temperature

V. Ya. POKROVSKII1, S.V. ZAITSEV-ZOTOV2, P. MONCEAU3 and F. Ya. NAD'1

1  Institute of Radioengineering and Electronics
2  Institute of Radioengineering and Electronics of RAS, Mokhovaya 11, 103907 Moscow Russia
3  Centre de Recherches sur les Très Basses Températures, CNRS, BP. 166X 38042 Grenoble cedex, France


Abstract
It is found that below 80 K o-TaS3 demonstrates spontaneous resistance fluctuations growing when the temperature is decreasing. The average relaxation time, τ0, obtained from the noise spectra demonstrates activated behavior, τ0 α exp(w/T), w ≈ 1300 K for 50 < T < 70 K. In the vicinity of the threshold the average frequency of the fluctuations, f0, grows with increasing the voltage, revealing onset of the Fröhlich current. log(f0) is found to be proportional to the increase of conductivity. We conclude that the main source of the resistance fluctuations are thermally-assisted jumps of dislocations of the charge-density waves.



© EDP Sciences 1993