Numéro
J. Phys. IV France
Volume 03, Numéro C2, Juillet 1993
International Workshop on Electronic Crystals
ECRYS - 93
Page(s) C2-171 - C2-174
DOI http://dx.doi.org/10.1051/jp4:1993234
International Workshop on Electronic Crystals
ECRYS - 93

J. Phys. IV France 03 (1993) C2-171-C2-174

DOI: 10.1051/jp4:1993234

Charge-density-wave phase slip in NbSe3

M.P. MAHER1, S. RAMAKRISHNA1, D.A. DI CARLO1, TL. ADELMAN1, V. AMBEGAOKAR1, J.D. BROCK2 and R.E. THORNE1

1  Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853, U.S.A.
2  School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, U.S.A.


Abstract
We have studied the phase-slip process by which charge-density-wave (CDW) current is converted to single-particle current at electrical contacts. Transport and X-ray scattering measurements indicate that an excess voltage Vps dropped between current contacts induces a large static deformation of the CDW phase. The measured Vps - and temperature-dependent phase-slip rates are consistent with a model in which CDW dislocation loops are thermally nucleated in the presence of these deformations. The effects of impurities and contact perturbations on the phase slip process are also discussed.



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