Numéro
J. Phys. IV France
Volume 03, Numéro C2, Juillet 1993
International Workshop on Electronic Crystals
ECRYS - 93
Page(s) C2-57 - C2-60
DOI http://dx.doi.org/10.1051/jp4:1993211
International Workshop on Electronic Crystals
ECRYS - 93

J. Phys. IV France 03 (1993) C2-57-C2-60

DOI: 10.1051/jp4:1993211

Electronic structure and transport properties of uniaxially deformed m - TaS3

V.B. PREOBRAZHENSKY and A.N. TALDENKOV

Russian Research Centre-Kurchatov Institute, 123182 Moscow, Russia


Abstract
Due to relative simplicity of its crystal and electronic band structure, apparent absence of any temperature or strain induced commensurate-incommensurate transitions monoclinic (m-) TaS3 may be regarded as a parent compound for the whole family of transition metal trichalcogenides. In present work an attempt is made to relate the recently obtained results in studying electronic properties of uniaxially deformed m-TaS3 [1] with the band-structure calculation [2].



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