Numéro
J. Phys. IV France
Volume 03, Numéro C2, Juillet 1993
International Workshop on Electronic Crystals
ECRYS - 93
Page(s) C2-49 - C2-52
DOI http://dx.doi.org/10.1051/jp4:1993209
International Workshop on Electronic Crystals
ECRYS - 93

J. Phys. IV France 03 (1993) C2-49-C2-52

DOI: 10.1051/jp4:1993209

Metal-to-insulator transition and threshold electric field for SDW depinning in (TMTSF)2X under pressure

M. NAGASAWA1, T. SAMBONGI1, K. NOMURA1 and H. ANZAI2

1  Department of Physics, Hokkaido University, Sapporo 060, Japan
2  Department of Materials Sciences, Himeji Institute of Technology, Kanagi, Kamigohri Hyogo 678-12, Japan


Abstract
Metal-to-insulator transition temperature (TMI) and the activation energy (EA) in the SDW phase of (TMTSF)2AsFe and (TMTSF)2PF6 were determined under pressure. Pressure dependence of 2EA/KBTMI near the critical pressure of the SDW phase, is compared with the mean-field theory by Yamaji. It was found that TMI is not equal to the normal-to-SDW transition temperature but lower than TSDW. Non-linear conduction was observed in a narrow temperature range above TMI.



© EDP Sciences 1993