Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-337 - C6-341
DOI http://dx.doi.org/10.1051/jp4:1991650
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-337-C6-341

DOI: 10.1051/jp4:1991650

A SUPERIOR CATHODOLUMINESCENCE SPECTRAL ANALYSIS AND IMAGING SYSTEM

P.J. WRIGHT

Oxford Instruments Ltd, Old Station Way, GB-Eynsham OX8 1TL, Great-Britain


Abstract
A low loss CL collection and analysis system that allows turnkey operation both for imaging and spectral analysis from 0.2 to 1.8 microns is described. Results obtained on Quantum well structures, MgO and Silicon are given. The results on Silicon show that CL spectroscopy can distinguish between regions of the sample which are averaged in the PL spectrum.



© EDP Sciences 1991