Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-335 - C6-336
DOI http://dx.doi.org/10.1051/jp4:1991649
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-335-C6-336

DOI: 10.1051/jp4:1991649

CAPACITANCE TRANSIENT SPECTROSCOPY (DLTS) OF EXTENDED DEFECTS IN SEMICONDUCTORS

U. GNAUERT, J. KRONEWITZ, M. SEIBT and W. SCHRÖTER

IV. Physikalisches Institut der Universität Göttingen, Bunsenstr. 11-15, D-3400 Göttingen and Sonderforschungsbereich 345 Göttingen, Germany

Without abstract




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