Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-317 - C6-322
DOI http://dx.doi.org/10.1051/jp4:1991647
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-317-C6-322

DOI: 10.1051/jp4:1991647

EBIC AND CL STUDY OF LASER DEGRADATION

P. HENOC, R. BENETTON-MARTINS and B. AKAMATSU

Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, 196 Av. Henri Ravéra, F-92120 Bagneux, France


Abstract
The first stages of Ga(Al)As laser degradation are studied by means of CL and EBIC measurements on cleaved facets of devices. Degradation by electron beam irradiation is compared to degradation during working. It is concluded that degradation starts in the depleted region with a loss of Si dopant electrical activity. Local degradation speed for Ga(Al)As epitaxial layers grown on either GaAs or Si substrates are compared.



© EDP Sciences 1991