Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-305 - C6-315
DOI http://dx.doi.org/10.1051/jp4:1991646
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-305-C6-315

DOI: 10.1051/jp4:1991646

EXCITATION-ENHANCED DISLOCATION MOBILITY IN SEMICONDUCTORS

G. VANDERSCHAEVE1, C. LEVADE1, A. FARESS1, J.J. COUDERC1 and D. CAILLARD2

1  Laboratoire de Physique des Solides, INSA Complexe Scientifique de Rangueil, F-31077 Toulouse Cedex, France
2  CEMES/LOE/CNRS, BP. 4347, F-31055 Toulouse Cedex, France


Abstract
Quantitative features of the enhancement effect by either laser light illumination or electron irradiation on the dislocation motion in semiconductors are surveyed. The experiments show that moving dislocations experience a lattice friction which is lowered under excitation. Theoretical analysis based on the kink diffusion model for dislocation motion indicates that the observed reduction in activation energy corresponds to the electronic energy level in the band gap associated with the straight dislocation sites.



© EDP Sciences 1991