Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-297 - C6-301
DOI http://dx.doi.org/10.1051/jp4:1991645
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-297-C6-301

DOI: 10.1051/jp4:1991645

CHARACTERIZATION OF AlGaAs/GaAs HBTs BY LOCALIZED FILTERED CATHODOLUMINESCENCE

C. DUBON-CHEVALLIER, A.C. PAPADOPOULO, V. AMARGER, C. BESOMBES, B. DESCOUTS and A.M. POUGNET

FRANCE TELECOM, Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, 196 avenue Henri Ravera, F-92220 Bagneux, France


Abstract
AlGaAs/GaAs Heterojunction Bipolar Transistors processed with an implanted technology require a Mg implantation to contact the p-type GaAs base layer from the surface and also a low energy B implantation to eliminate the lateral diode between the n+ emitter contact layer and the converted p-type region. Low temperature cathodoluminescence spectroscopy has been used to investigate the damage induced by B implantation. An extensive analysis has then been carried out along chemical bevels to localize the damage induced by the B implantation inside the structure. Cathodoluminescence has also been used to optimize the annealing process which follows the Mg implantation in order to recover the defects induced by the implantation.



© EDP Sciences 1991