Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-295 - C6-296
DOI http://dx.doi.org/10.1051/jp4:1991644
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-295-C6-296

DOI: 10.1051/jp4:1991644

CHARACTERIZATION OF SEMIINSULATING GaAs : Cr BY SCANNING ELECTRON ACOUSTIC MICROSCOPY

B. MÉNDEZ and J. PIQUERAS

Departamento de Física de Materiales, Facultad de Físicas, Universidad Complutense, SP-28040 Madrid, Spain

Without abstract




© EDP Sciences 1991
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