Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-285 - C6-293
DOI http://dx.doi.org/10.1051/jp4:1991643
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-285-C6-293

DOI: 10.1051/jp4:1991643

USE OF SCANNING ELECTRON ACOUSTIC MICROSCOPY FOR III-V COMPOUNDS DEVICES ANALYSIS

J. F. BRESSE

France Telecom, Centre National d'Etudes des Télécommunications, 196 avenue H. Ravera, F-92220 Bagneux, France


Abstract
The use of scanning electron acoustic microscopy (SEAM) in III-V compounds devices is demonstrated. The order of magnitude of the attainable resolution is given, depending of the depth of the observed defect. A spatial resolution nearly equal to the spot size is attainable. Examples of the use of SEAM in III-V compounds devices are given. The adherence of metallic layers, Au and Au-Ti on GaAs have been studied by SEAM and compared with global adherence measurements. The case of strong adherence problems for a strained WMoGe layer on GaAs is also studied.



© EDP Sciences 1991