Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-277 - C6-282
DOI http://dx.doi.org/10.1051/jp4:1991642
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-277-C6-282

DOI: 10.1051/jp4:1991642

ELECTRONIC TRANSPORT PROPERTIES CHARACTERIZATION OF SILICON WAFERS BY MODULATED PHOTOREFLECTANCE

B.C. FORGET and D. FOURNIER

Laboratoire d'Instrumentation, Univ. Pierre & Marie Curie, Paris VI ESPCI, 10 rue Vauquelin, F-75005 Paris, France


Abstract
We have used the photoreflectance technique to characterize electronical transport properties of silicon wafers. By using the intermediate frequency range (1 kHz to 100 kHz) and selecting a proper excitation wavelength, it is possible to facilitate the characterization. In particular we show that this technique permits the determination of surface recombination velocity.



© EDP Sciences 1991