Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-271 - C6-275
DOI http://dx.doi.org/10.1051/jp4:1991641
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-271-C6-275

DOI: 10.1051/jp4:1991641

HIGH RESOLUTION ELECTRON BEAM INJECTION IN SEMICONDUCTORS USING A SCANNING TUNNELING MICROSCOPE

S.F. ALVARADO, Ph. RENAUD and H.P. MEIER

IBM Research Division, Zurich Research Laboratory, Säumerstr. 4, CH-8803 Rüschlikon, Switzerland


Abstract
The tip of a scanning tunneling microscope is used as a source of ultralow-energy electrons to excite luminescence in model AlGaAs/GaAs(001) heterostructures. This beam injection technique has the advantage of providing a nanometer-sized charge generation volume. We demonstrate the application of this technique to determine minority charge carrier transport parameters such as the thermalization length of hot electrons and the diffusion length of minority electrons.



© EDP Sciences 1991