2nd International Workshop
J. Phys. IV France 01 (1991) C6-271-C6-275
HIGH RESOLUTION ELECTRON BEAM INJECTION IN SEMICONDUCTORS USING A SCANNING TUNNELING MICROSCOPES.F. ALVARADO, Ph. RENAUD and H.P. MEIER
IBM Research Division, Zurich Research Laboratory, Säumerstr. 4, CH-8803 Rüschlikon, Switzerland
The tip of a scanning tunneling microscope is used as a source of ultralow-energy electrons to excite luminescence in model AlGaAs/GaAs(001) heterostructures. This beam injection technique has the advantage of providing a nanometer-sized charge generation volume. We demonstrate the application of this technique to determine minority charge carrier transport parameters such as the thermalization length of hot electrons and the diffusion length of minority electrons.
© EDP Sciences 1991