Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-253 - C6-257
DOI http://dx.doi.org/10.1051/jp4:1991639
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-253-C6-257

DOI: 10.1051/jp4:1991639

CHARACTERIZATION OF MULTILAYERS ADHERENCE ON GaAs SUBSTRATE BY INFRARED IMAGING AND CORRELATION TO ASSOCIATED MICROSCOPY STUDIES

J.M. TEILLERIE1, M. THOLOMIER1 and J.E BRESSE2

1  Laboratoire de Génie Electronique de Marseille (LaGEM), Campus Universitaire de St. Jérôme, Avenue de l'Escadrille Normandie-Niemen, F-13397 Marseille Cedex 13, France
2  Centre National d'Etudes des Télécommunications, Groupement PMM, Département MPM, 196 avenue Henri Ravera, F-92220 Bagneux, France


Abstract
The adherence of metallic multilayers in III-V compound devices (W-Mo-Ge deposited on Ga As substrate) has been studied by different characterization techniques : infrared imaging, scanning electron microscopy and localized X ray analysis. The observations realized using infrared emission permit to identify the blistering effect of the deposited layers. The thermal images are in good agreement with topographic images realized by scanning electron microscopy. Moreover the localized X ray analysis of the blisters indicate that the adherence defect concerns the initial Ge/GaAs interface. Infrared emission imaging appears as a non destructive method which may be a useful tool for this kind of problem.



© EDP Sciences 1991