Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-241 - C6-252
DOI http://dx.doi.org/10.1051/jp4:1991638
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-241-C6-252

DOI: 10.1051/jp4:1991638

THERMAL WAVE PROBING OF THE OPTICAL, ELECTRONIC AND THERMAL PROPERTIES OF SEMICONDUCTORS

D. FOURNIER and B.C. FORGET

Laboratoire d'Instrumentation, Univ. Pierre & Marie Curie, Paris VI ESPCI, 10 rue Vauquelin, F-75005 Paris, France


Abstract
In this paper we will demonstrate how the thermal waves have been revealed to be a good probe for the detection of free carriers dynamic and consequently for the determination of electronic parameters determination. After the detailed description of the two setups we have used (mirage and photoreflectance), we will explain how to proceed to achieve theoretical calculations either in a 1D geometry or in a 3D one. We will then illustrate our demonstration with examples taken in spectroscopy investigation domain (photothermal study of amorphous silicon), in thermal parameter determination, and in transport properties evaluation (photothermal study of bulk silicon or silicon wafer) with different spatial resolutions. Finally, we will emphazise that using a dye laser for excitation instead of an Argon one and intermediate frequency modulation range, can allow more precise determination of electronic parameters.



© EDP Sciences 1991