Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-231 - C6-236
DOI http://dx.doi.org/10.1051/jp4:1991636
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-231-C6-236

DOI: 10.1051/jp4:1991636

ELECTRICAL ACTIVITY OF Al DOPED SILICON ∑ 9 BICRYSTAL BY S.T.E.B.I.C.

T. BENABBAS and J.-Y. LAVAL

Laboratoire de Physique du Solide, C.N.R.S - E.S.P.C.I., 10 rue Vauquelin, F-75231 Paris Cedex, France


Abstract
The influence of aluminium on the electrical properties of silicon bicrystals was analyzed and related to the interaction between impurities and defects. A p-type silicon ∑ 9 symmetrical tilt bicrystal, with a chemical gradient in aluminium was grown by a directional solidification method. The combination of electrical, chemical and structural local information, with high spatial resolution enabled the electrical activity to be correlated to the cristallochemistry of the boundary. It was shown that the recombining activity depends on the localization and environment of aluminium.



© EDP Sciences 1991