Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-217 - C6-222
DOI http://dx.doi.org/10.1051/jp4:1991633
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-217-C6-222

DOI: 10.1051/jp4:1991633

INVESTIGATION OF ELECTRICAL PROPERTY INHOMOGENEITIES FORMED BY PLASMA ETCHING

I.E. BONDARENKO, S.V. KOVESHNIKOV, E.B. YAKIMOV and N.A. YARYKIN

Institute of Microelectronics Technology and High Purity Materials, USSR Academy of Sciences, Cherngolovka, Moscow District 142432, USSR


Abstract
The possibility to use reactive ion etched Si crystals doped with gold as a model object for diffusion length profile reconstruction from the EBIC measurements has been discussed. It has been shown that the results of profile reconstruction from the EBIC measurements correlate well with the recombination center profiles obtained by DLTS.



© EDP Sciences 1991