Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-199 - C6-204
DOI http://dx.doi.org/10.1051/jp4:1991630
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-199-C6-204

DOI: 10.1051/jp4:1991630

LBIC INVESTIGATION OF PHOSPHORUS GETTERED MULTICRYSTALLINE SILICON WAFERS

I. PERICHAUD, M. STEMMER and S. MARTINUZZI

Laboratoire de Photoélectricité des Semi-conducteurs, Case 231, Faculté des Sciences et Techniques de Saint-Jérôme, F-13397 Marseille Cedex 13, France


Abstract
In multicrystalline silicon the interaction of dissolved impurities with extended crystallographic defects limits the effective minority carrier diffusion lengths Ln. External gettering by phosphorus diffusion near the surface is used to remove metallic impurities from the bulk of P type silicon wafers. It was found that Ln increases drastically after gettering at 850°C for 120 or 240 mn. SIMS analysis indicates that iron, copper and nickel are accumulated in the phosphorus doped regions and LBIC scan maps at λ = 940 nm indicate that the improvement of Ln results of the neutralization of intragrain and grain boundary recombination centers. It is concluded that phosphorus gettering removes dissolved and segregated impurity atoms.



© EDP Sciences 1991