Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-193 - C6-198
DOI http://dx.doi.org/10.1051/jp4:1991629
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-193-C6-198

DOI: 10.1051/jp4:1991629

NEW POSSIBILITIES OF EBIC FOR DISLOCATION STUDY

E.B. YAKIMOV

Institute of Microelectronics Technology and High Purity, Materials USSR Academy of Sciences, Chernogolovka, Moscow District 142432, USSR


Abstract
The recent results of the EBIC investigations of dislocations in Si demonstrating the influence of point defect atmospheres on the characteristics of the EBIC contrast of the both charged and uncharged dislocations are discussed. It is shown that from such investigations characteristics of these atmospheres can be obtained.



© EDP Sciences 1991