2nd International Workshop
J. Phys. IV France 01 (1991) C6-173-C6-179
CHARACTERIZATION OF POLYCRYSTALLINE SILICON BY EBICM. KITTLER, J. LÄRZ, G. MORGENSTERN and W. SEIFERT
Institut für Halbleiterphysik, PF 409, D-1200 Frankfurt (Oder), Germany
The paper presents diffusion-length and contrast data for large-grained polycrystalline silicon. Rapid thermal annealing was observed to improve the material quality whereas conventional annealing in evacuated quartz ampoules made the material worse. Evidence for significant potential barriers and conduction at certain grain boundaries and for gettering action of defects was found.
© EDP Sciences 1991