Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-173 - C6-179
DOI http://dx.doi.org/10.1051/jp4:1991626
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-173-C6-179

DOI: 10.1051/jp4:1991626

CHARACTERIZATION OF POLYCRYSTALLINE SILICON BY EBIC

M. KITTLER, J. LÄRZ, G. MORGENSTERN and W. SEIFERT

Institut für Halbleiterphysik, PF 409, D-1200 Frankfurt (Oder), Germany


Abstract
The paper presents diffusion-length and contrast data for large-grained polycrystalline silicon. Rapid thermal annealing was observed to improve the material quality whereas conventional annealing in evacuated quartz ampoules made the material worse. Evidence for significant potential barriers and conduction at certain grain boundaries and for gettering action of defects was found.



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