Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-137 - C6-142
DOI http://dx.doi.org/10.1051/jp4:1991622
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-137-C6-142

DOI: 10.1051/jp4:1991622

AN INVESTIGATION OF CHARGE STATES IN ELECTRON IRRADIATED LOW NITRIDED SILICONDIOXIDE FILMS

V. RANK1, M. KOPP1, G. WEIDNER2 and M. NOVAKOWSKI1

1  Department of Physics of Rostock University, Universitätsplatz 3, D-2500 Rostock 1, Germany
2  Institut of Semiconductor Physics, PSF 409, D-1200 Frankfurt/O., Germany


Abstract
MOS-structures with pure SiO2-films, with nitrided Si-SiO2 interface region and with an insulator layer with uniform weak nitridation were irradiated with 2 MeV electron beam in steps between 10 krad (SiO2) and 2 Mrad (SiO2) with and without an electrical field. The electrical characterisation with CV-(Capacitance-Voltage) and DLTS- (Deep Level Transient Spectroscopy) method gives us information about the charge states in this structure. The electron irradiation generates electron-hole pairs and a positive gate field effects a hole drift to the interface, where we can find a positive oxide charge and a rising interface density. The amount of density is a function of nitridation and of the electron beam dose. The best electrical stability under irradiation induced hole injection is to be found in an uniform nitrided SiO2 layer.



© EDP Sciences 1991