Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-117 - C6-123
DOI http://dx.doi.org/10.1051/jp4:1991619
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-117-C6-123

DOI: 10.1051/jp4:1991619

CATHODOLUMINESCENCE QUANTUM WELL STUDIES

C.A. WARWICK

AT & T Bell Laboratories, Room 4C-410, Crawfords Corner Road, Holmdel, NJ 07733-1988, USA


Abstract
The advent of quantum well structures has given rise to new physics and new technology. Quantum well propertiees are determined by interfaces between chemically distinct, heterostructural compounds. The study of these interfaces is of vital importance to the progress of this field, and many studies using a variety of techniques have been made. The scanning cathodoluminescence microscope has made major contributions to the understanding of interfaces in quantum well devices but has previously been limited to a spatial resolution of [MATH]. We have achieved 60 nm spatial resolution in this mode by : 1) using a small probe generated by an intense field emission source ; 2) using a [MATH] beam to inject both near the surface and with minimal lateral scattering ([MATH]) ; and 3) by detecting photons from pre-diffusion radiative recombination events. Carriers living longer than [MATH] recombine non-radiatively at the surface ; the surface acts as a picosecond "shutter". We force surface recombination to dominate the lifetime by injecting very close to the surface.



© EDP Sciences 1991