Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-83 - C6-88
DOI http://dx.doi.org/10.1051/jp4:1991615
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-83-C6-88

DOI: 10.1051/jp4:1991615

ADVANTAGES OF ac-EBIC IN DETERMINING THE SEMICONDUCTOR PARAMETERS

A. ROMANOWSKI

Institute of Electron Technology, Janiszewsiego 11/17, PL-50-372 Wroclaw, Poland


Abstract
The influence of trapping centres on the phase shift of the short circuit current generated by point source is analyzed. It is shown that maximum value of the phase corresponds to emission coefficient. Minority trapping centres of the Cu implanted n+p shallow junction are measured by ac-LBIC and ac-EBIC.



© EDP Sciences 1991