Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-77 - C6-82
DOI http://dx.doi.org/10.1051/jp4:1991614
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-77-C6-82

DOI: 10.1051/jp4:1991614

THEORETICAL STUDY OF HIGH INJECTION EFFECTS IN EBIC MEASUREMENTS OF GRAIN BOUNDARY RECOMBINATION VELOCITY IN SILICON

J.-L. MAURICE1 and Y. MARFAING2

1  Laboratoire de Physique des Matériaux, CNRS-Bellevue, 1 Place Aristide-Briand, F-92195 Meudon Cedex, France
2  Laboratoire de Physique des Solides de Bellevue, CNRS-Bellevue, 1 Place Aristide-Briand, F-92195 Meudon Cedex, France


Abstract
The presence of carriers in the grain boundary (GB) space charge is taken into account in solving numerically Poisson's equation. This allows one, by using a schematic description of electron excitation, to investigate the theoretical behaviour of the GB recombination velocity, measured by EBIC, in high injection conditions.



© EDP Sciences 1991