Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-71 - C6-74
DOI http://dx.doi.org/10.1051/jp4:1991612
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-71-C6-74

DOI: 10.1051/jp4:1991612

INFLUENCE OF THE INJECTION ON THE ELECTRON-BEAM INDUCED CURRENT COLLECTION EFFICIENCY

D.E. MEKKI and R.J. TARENTO

Laboratoire de Physique des Matériaux, 1 Place A. Briand, CNRS, Bellevue, F-92195 Meudon Cedex, France

Without abstract




© EDP Sciences 1991
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