Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-63 - C6-69
DOI http://dx.doi.org/10.1051/jp4:1991611
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-63-C6-69

DOI: 10.1051/jp4:1991611

INFLUENCE OF THE DEPLETED ZONE ON THE EBIC CONTRAST : A SIMPLE DERIVATION. APPLICATION TO THE DISLOCATION AND GRAINBOUNDARY CASES

D.E. MEKKI and R.J. TARENTO

Laboratoire de Physique des Matériaux, 1 Place A. Briand, CNRS, Bellevue, F-92195 Meudon Cedex, France


Abstract
The present article deals with a simple derivation of the modelisation of the EBIC contrast. It takes account of the recombination in the depleted zone (recombination velocity and finite diffusion length). It has been applied to the dislocation and grain boundary cases.



© EDP Sciences 1991