Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-57 - C6-62
DOI http://dx.doi.org/10.1051/jp4:1991610
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-57-C6-62

DOI: 10.1051/jp4:1991610

INVESTIGATION OF MINORITY CARRIER RECOMBINATION IN GaAs : Sn BY MEANS OF EBIC AND CL

G. OELGART1 and N. PUHLMANN2

1  Sektion Physik der Universität Leipzig, Linnèstrasse 5, D-7010 Leipzig, Germany
2  Sektion Physik der Humboldt-Universität zu Berlin, Invalidenstrasse 110, D-1040 Berlin, Germany


Abstract
The recombination properties of minority carriers have been determined from EBIC and CL measurements versus the primary electron beam energy on step cooling LPE grown n-type GaAs : Sn [MATH] in the temperature range [MATH]. Based on the lifetime and internal quantum yield analysis as a function of the electron concentration we determined the radiative recombination coefficient to B- 5*10-11 cm3s-1 and the internal quantum yield increases from 3% (n0=3*1016cm-3) to 30% (n0=8*1017cm-3) at room temperature. The increase in external luminescence strength versus diminished temperature is caused by the lowered self-absorption and by the rising internal quantum efficiency. Based on the diffusion length and internal quantum yield analysis vs the temperature, the non-radiative recombination due to the deep Sn-acceptor was shown on strongly doped samples [MATH] in the range [MATH].



© EDP Sciences 1991