Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-45 - C6-50
DOI http://dx.doi.org/10.1051/jp4:1991608
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-45-C6-50

DOI: 10.1051/jp4:1991608

DISCUSSION OF THE CONVERGENCE PROPERTIES OF THE PERTURBATION SERIES USED IN THE CALCULATION OF EBIC- AND CL-CONTRASTS

W. HERGERT1, L. PASEMANN2 and S. HILDEBRANDT1

1  Martin-Luther-Universität, Halle-Wittenberg, Fachbereich Physik, Friedemann-Bach-Platz 6, D-4020 Halle, Germany
2  Asteilung Halbleiterphysik, Obever Eselsberg, Postflach 4066, D-7900 ULM, Gemany


Abstract
For the calculation of the contrast of a defect in semiconducting material, the defect is regarded as a bounded region where the minority carrier lifetime τ' is lower than that (τ) outside the defect region. The minority carrier density in the presence of the defect is normally written in terms of a perturbation series. The conditions for using a perturbation series for different kinds of defects are discussed.



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