Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-39 - C6-44
DOI http://dx.doi.org/10.1051/jp4:1991607
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-39-C6-44

DOI: 10.1051/jp4:1991607

RECENT RESULTS IN THE THEORETICAL DESCRIPTION OF CL AND EBIC DEFECT CONTRASTS

S. HILDEBRANDT, J. SCHREIBER and W. HERGERT

Martin-Luther-Universität Halle-Wittenberg, Fachbereich Physik, Friedemann-Bach-Platz 6, D-4020 Halle (Saale), Germany


Abstract
The theoretical description used for the analysis of beam-voltage dependent CL and EBIC contrasts from a surface-parallel dislocation is summarized. The importance of the use of a realistic carrier generation model is discussed and suitable methods of the evaluation of defect parameters (depth position, defect strength) are proposed.



© EDP Sciences 1991