Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-23 - C6-28
DOI http://dx.doi.org/10.1051/jp4:1991604
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-23-C6-28

DOI: 10.1051/jp4:1991604

NUMERICAL ANALYSIS OF THE TEMPERATURE DEPENDENCE OF EBIC AND CL CONTRASTS

M. ECKSTEIN and H.-U. HABERMEIER

Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, Germany


Abstract
Using simultaneous EBIC and CL measurements it is possible to extract the temperature dependence of the recombination efficiency from the temperature dependence of the defect contrasts, which in GaAs are dominated by the temperature dependence of the minority carrier diffusion length. Our measurements on dislocations in n-type GaAs indicate an electronic level of about 30meV away from a band edge related to the dislocations and give evidence for an electric field associated with the dislocation.



© EDP Sciences 1991