Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-15 - C6-19
DOI http://dx.doi.org/10.1051/jp4:1991602
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-15-C6-19

DOI: 10.1051/jp4:1991602

QUANTITATIVE EVALUATION OF RECOMBINATION ACTIVITY OF DISLOCATIONS BY COMBINED SEM-CL/EBIC

J. SCHREIBER and S. HILDEBRANDT

Martin-Luther-Universität Halle-Wittenberg, Fachbereich Physik, Friedemann-Bach-Platz 6, D-4020 Halle (Saale), Germany


Abstract
The methodology of quantitative SEM-CL/EBIC investigations for the evaluation of the recombination defect strength of individual dislocations in crystalline semiconductor samples is presented. The interpretation of the experiments is performed by using a unified theoretical description of CL and EBIC matrix signals inclusive of the defect contrasts. Full analysis of SEM-CL/EBIC studies on a semiconductor sample with surface Schottky barrier is discussed. The effective defect strength values corresponding to induced non-radiative recombination of dislocations in GaAs, GaAsP, GaP are deduced.



© EDP Sciences 1991