Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-839 - C2-846
DOI http://dx.doi.org/10.1051/jp4:1991299
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-839-C2-846

DOI: 10.1051/jp4:1991299

PLANARIZED LOW-STRESS OXIDE/NITRIDE PASSIVATION FOR ULSI DEVICES

H. TREICHEL, R. BRAUN, Z. GABRIC, O. SPINDLER and A. GSCHWANDTNER

SIEMENS AG, Semiconductor Group, Process Engineering, Otto-Hahn-Ring 6, D-8000 München 83, Germany


Abstract
A new planarizing passivation scheme has been developed. The passivation sequence consists of a planarized SiO2 (deposition/etch-back/deposition ; similar to that for the intermetal dielectric in-situ planarization) with a sandwich of PSG and low-stress/low-hydrogen silicon nitride on top. The different process steps, and properties of the deposited materials will be described (e.g. mechanical stress and hydrogen content).



© EDP Sciences 1991