Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-787 - C2-794
DOI http://dx.doi.org/10.1051/jp4:1991292
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-787-C2-794

DOI: 10.1051/jp4:1991292

LOW-TEMPERATURE EPITAXY AND IN-SITU DOPING OF SILICON FILMS

R. KIRCHER1, M. FURUNO2, J. MUROTA3 and S. ONO3

1  Siemens AG, Corporate Research and Development, D-8000 München, Germany
2  Kokusai Electric Co. Ltd., Semiconductor Equipment Division, Hamura, Tokyo 190-11, Japan
3  Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, Japan


Abstract
The B2H6 - and PH3 - partial pressure dependence of the doping concentration of in-situ doped silicon films, deposited in the temperature range between 600 and 750°C by low pressure chemical vapor deposition has been investigated for two different substrate orientations. In addition, the influence of B2H6 and PH3 and their partial pressure on the silicon growth rate has been studied. It is found that the doping concentration can be controlled over a wide range, and that in the presence of PH3 as well as B2H6 the silicon growth is reduced. In the case of boron doping, the in-situ doping has been used to fabricate delta-doped silicon layers.



© EDP Sciences 1991