Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-779 - C2-786
DOI http://dx.doi.org/10.1051/jp4:1991291
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-779-C2-786

DOI: 10.1051/jp4:1991291

EPITAXIAL SILICON GROWTH BY RAPID THERMAL CVD

D.W. McNEILL, Y. LIANG, J.H. MONTGOMERY, H.S. GAMBLE and B.M. ARMSTRONG

Institute of Advanced Microelectronics, Department of Electrical and Electronic Engineering, The Queen's University of Belfast, Ashby Building, Stranmillis Road, IR-Belfast BT9 5AH, Northern Ireland


Abstract
A rapid thermal chemical vapour deposition system has been used for the growth of epitaxial silicon layers on silicon substrates in the temperature range 590°C - 1000°C. Low pressure deposition schedules have been found essential in order to minimise the concentrations of oxygen and carbon in the layers. In-situ pre-cleaning schedules have been established to remove oxide layers from the substrates prior to layer deposition. The application of these deposited epitaxial layers to the production of a buried gate static induction thyristor is described.



© EDP Sciences 1991