J. Phys. IV France 02 (1991) C2-779-C2-786
EPITAXIAL SILICON GROWTH BY RAPID THERMAL CVDD.W. McNEILL, Y. LIANG, J.H. MONTGOMERY, H.S. GAMBLE and B.M. ARMSTRONG
Institute of Advanced Microelectronics, Department of Electrical and Electronic Engineering, The Queen's University of Belfast, Ashby Building, Stranmillis Road, IR-Belfast BT9 5AH, Northern Ireland
A rapid thermal chemical vapour deposition system has been used for the growth of epitaxial silicon layers on silicon substrates in the temperature range 590°C - 1000°C. Low pressure deposition schedules have been found essential in order to minimise the concentrations of oxygen and carbon in the layers. In-situ pre-cleaning schedules have been established to remove oxide layers from the substrates prior to layer deposition. The application of these deposited epitaxial layers to the production of a buried gate static induction thyristor is described.
© EDP Sciences 1991