Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-665 - C2-672
DOI http://dx.doi.org/10.1051/jp4:1991280
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-665-C2-672

DOI: 10.1051/jp4:1991280

CHEMICAL VAPOUR DEPOSITION OF THE Al-O-N SYSTEM

B. ASPAR, B. ARMAS, C. COMBESCURE and D. THENEGAL

Institut de Science et de Génie des Matériaux et Procédés, C.N.R.S, BP 5, F-66120 Font Romeu, Odeillo, France


Abstract
Using chemical vapour deposition, aluminium - oxygen-nitrogen coatings have been synthesized with aluminium trichloride, hydrogen, ammonia and nitrous oxide. The composition of the equilibrium phases is first determined by a thermodynamic calculation. The only AlON phase we investigate is ([MATH]) spinel aluminium oxynitride and it is considered as a stoichiometric phase with a composition of Al7O9N. The results indicate the existence fields of aluminium nitride and alumina and show the difficulty of obtaining the spinel aluminium oxynitride without other phases. Temperature, pressure and gas composition play an important part because they directly influence the reactivity of aluminium chloride. A hot-wall reactor is used for the experimental study. In this way, we obtain AlN, a mixture of AlN and [MATH] AlON, and [MATH] Al2O3. The annealed deposits show the stability of AlON obtained at 1270K.



© EDP Sciences 1991