Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-657 - C2-664
DOI http://dx.doi.org/10.1051/jp4:1991279
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-657-C2-664

DOI: 10.1051/jp4:1991279

PROTECTION AGAINST OXIDATION OF C/SiC COMPOSITES BY CHEMICAL VAPOUR DEPOSITION OF TITANIUM DIBORIDE : DEPOSITION KINETICS AND OXIDATION BEHAVIOUR OF FILMS PREPARED FROM TiCl4/BCl3/H2 MIXTURES

C. COURTOIS1, J. DESMAISON1 and H. TAWIL2

1  Laboratoire de Céramiques Nouvelles, URA CNRS 320, 123 avenue Albert Thomas, F-87060 Limoges cedex, France
2  S.E.P, F-33165 Saint Médard en Jalles cedex, France


Abstract
TiB2 coatings were deposited by hydrogen reduction of TiCl4 and BCl3. The objective was to correlate process variables with thermodynamic equilibrium calculations, deposition kinetics, coating structure and properties. Particular emphasis was given to obtaining deposits having appropriate oxidation resistance to protect C/SiC composites. Films, obtained at moderate temperature (800°C), acted as self-healing external barriers below the microcracking temperature of the outer SiC coating used as primary oxygen protection.



© EDP Sciences 1991