Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-389 - C2-395
DOI http://dx.doi.org/10.1051/jp4:1991247
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-389-C2-395

DOI: 10.1051/jp4:1991247

COPPER AND COPPER OXIDE THIN FILMS OBTAINED BY METALORGANIC MICROWAVE PLASMA CVD

B. WISNIEWSKI, J. DURAND and L. COT

Laboratoire de Physicochimie des Matériaux (URA 1312 CNRS), ENSCM, 8 rue de l'École Normale, F-34053 Montpellier cedex 1, France


Abstract
Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD) is an innovative technique allowing the direct preparation, at low temperature, of different valence states of copper (Cu0, CuI, CuII). The precursor used is a volatile metalorganic one (copper acetylacetonate) with helium as a carrier gas. The precursor is then transported in a remote plasma of Ar, Ar/O2 or Ar/N2O gas at low pressure. A judicious choice of the process parameters - microwave power, substrate temperature and nature of the oxidant gas (N2O or O2)- allows to favour the formation of metallic copper, Cu2O or CuO. Copper and its oxides have been deposited as thin films on silicon and magnesium oxide single crystals. The techniques used for the characterization of the as deposited polycrystalline films are X-ray diffraction, Auger Electron Spectroscopy and Scanning Electron Microscopy.



© EDP Sciences 1991