Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-357 - C2-364
DOI http://dx.doi.org/10.1051/jp4:1991243
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-357-C2-364

DOI: 10.1051/jp4:1991243

SURFACE MECHANISMS IN THE UVCVD OF SiO2 FILMS

C. LICOPPE, C. MERIADEC, J. FLICSTEIN, Y.I. NISSIM, E. PETIT and J.M. MOISON

Groupement CNET/CNRS, Laboratoire de Bagneux, Centre National d'Études des Télécommunications, 196 avenue Henri Ravera, F-92220 Bagneux, France


Abstract
Surface-sensitive multiple internal reflection absorption infrared spectroscopy has been applied to the study of the growth of SiO2 films under far ultraviolet illumination. Spectra provide evidence for a previously unreported Si-H absorption peak occurring at 2208 cm-1. It is shown that this line characterizes the molecular structure of the photochemisorption site of silane and that this phenomenon occurs on sites including hydroxyl groups which are also produced in a photochemical gas-solid process. In the first step of silane photochemisorption, photoexcitation occurs on the surface while in the oxidization step, photoexcitation of oxygen molecules is an active process in the gas phase.



© EDP Sciences 1991