Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-319 - C2-326
DOI http://dx.doi.org/10.1051/jp4:1991239
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-319-C2-326

DOI: 10.1051/jp4:1991239

GROWTH KINETICS, CRYSTAL STRUCTURE, AND MORPHOLOGY OF OMVPE-GROWN HOMOEPITAXIAL CdTe

D.W. SNYDER1, 2, P.J. SIDES2, E.I. KO2 and S. MAHAJAN3

1  ALCOA Technical Center, Alcoa Center, PA, 15069 USA
2  Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, U.S.A
3  Metallurgical Engineering and Materials science, Carnegie Mellon University, Pittsburgh, PA 15213, U.S.A


Abstract
The growth rate, crystal structure, morphology, and electronic properties of homoepitaxial CdTe grown by OMVPE in an impinging jet reactor were investigated. Under operating conditions where surface reactions controlled the rate, the deposition rate depended on the diethyltelluride partial pressure to the .8 power and on the dimethylcadmium partial pressure to the .2 power, approximately. Cadmium was easily adsorbed and was ubiquitous on the surface during deposition ; tellurium was relatively scarce on the surface. Deposition on three of the four low-index orientations proceeded at the same rate ; CdTe grew on the (111)Te, however, at twice this rate. Hillocks were removed completely by deposition on a (100) surface misoriented three degrees toward the (111)Te. Modeling of the fluid dynamics and mass transport in the reactor confirmed the high mass transfer rates obtainable with the impinging jet reactor ; the mass transfer limited deposition, however, was nonuniform under the jet.



© EDP Sciences 1991