Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-295 - C2-302
DOI http://dx.doi.org/10.1051/jp4:1991236
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-295-C2-302

DOI: 10.1051/jp4:1991236

DEPOSITION OF Y-Ba-Cu-O-FILMS BY MO-CVD USING A NOVEL BARIUM PRECURSOR

C.I.M.A. SPEE, E.A. VAN DER ZOUWEN-ASSINK, K. TIMMER, A. MACKOR and H.A. MEINEMA

TNO Industrial Research , P.O. Box 108, NL-3700 AC Zeist, The Netherlands


Abstract
Y-Ba-Cu-oxides are deposited by MOCVD in a hot-wall reactor using the well known copper- and yttrium-β-diketonate precursors, Cu(thd)2 and Y(thd)3, and the novel barium precursor, Ba(hfa)2 tetraglyme. This novel barium precursor is thermally stable, non-hygroscopic and highly volatile. Depositions are performed on single-crystalline (100)-oriented MgO substrates. Depositions performed at 800°C and 900°C show smooth c-axis-oriented YBa2Cu3O7-δ layers, with CuO precipitates. At 900°C also Y2BaCuO5 and barium oxide crystals are present.



© EDP Sciences 1991