J. Phys. IV France 02 (1991) C2-295-C2-302
DEPOSITION OF Y-Ba-Cu-O-FILMS BY MO-CVD USING A NOVEL BARIUM PRECURSORC.I.M.A. SPEE, E.A. VAN DER ZOUWEN-ASSINK, K. TIMMER, A. MACKOR and H.A. MEINEMA
TNO Industrial Research , P.O. Box 108, NL-3700 AC Zeist, The Netherlands
Y-Ba-Cu-oxides are deposited by MOCVD in a hot-wall reactor using the well known copper- and yttrium-β-diketonate precursors, Cu(thd)2 and Y(thd)3, and the novel barium precursor, Ba(hfa)2 tetraglyme. This novel barium precursor is thermally stable, non-hygroscopic and highly volatile. Depositions are performed on single-crystalline (100)-oriented MgO substrates. Depositions performed at 800°C and 900°C show smooth c-axis-oriented YBa2Cu3O7-δ layers, with CuO precipitates. At 900°C also Y2BaCuO5 and barium oxide crystals are present.
© EDP Sciences 1991