J. Phys. IV France 02 (1991) C2-271-C2-278
NEW OMCVD PRECURSORS FOR SELECTIVE COPPER METALLIZATIONJ.A.T. NORMAN, B.A. MURATORE, P.N. DYER, D.A. ROBERTS and A.K. HOCHBERG
SCHUMACHER, 1969 Palomar Oaks Way, Carlsbad, California , U.S.A
Due to its excellent electrical conductivity and high electromigration resistance, copper is widely predicted to be the interconnect metal of the future for electronic microdevices. This presentation focusses upon the synthesis of a new series of volatile liquid Cu+l complexes which are shown to be suitable for the deposition of pure, adherent and highly conducting copper films by CVD. Selective depositions onto metallic versus insulating dielectric substrates are achieved between 120 to 420°C with growth rates in excess of 100 nm/min and grain sizes as low as 0.1 microns. In addition, a novel complementary copper etching process is discussed that is chemically compatible with the copper CVD chemistry.
© EDP Sciences 1991