Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-253 - C2-261
DOI http://dx.doi.org/10.1051/jp4:1991231
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-253-C2-261

DOI: 10.1051/jp4:1991231

METALORGANIC PRECURSORS FOR SEMICONDUCTORS REQUIREMENTS AND RECENT DEVELOPMENTS

A.C . JONES

Epichem Limited, Power Road, Bromborough, Wirral, GB-Mersesydide L62 3QF, Great-Britain


Abstract
Recent advances in the growth of III-V and II-VI semiconductor materials by MOVPE have been greatly facilitated by the development of new metalorganic precursors. The use of trimethylamine alane (AlH3 (NMe3) ) has allowed the growth of AlGaAs with greatly lowered carbon and oxygen levels, whilst adducts such as Me2ZnNEt3 have served to eliminate a formerly severe prereaction during growth of ZnSe and ZnS. A number of these recent developments are critically reviewed and possible growth mechanisms are discussed.



© EDP Sciences 1991