Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-243 - C2-252
DOI http://dx.doi.org/10.1051/jp4:1991230
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-243-C2-252

DOI: 10.1051/jp4:1991230

METALORGANIC CHEMICAL VAPOR DEPOSITION : EXAMPLES OF THE INFLUENCE OF PRECURSOR STRUCTURE ON FILM PROPERTIES

K.F. JENSEN, A. ANNAPRAGADA, K.L. HO, J.-S. HUH, S. PATNAIK and S. SALIM

Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A


Abstract
The influence of precursor structure and reactivity on properties of compound semiconductors grown by metalorganic chemical vapor deposition (MOCVD) is discussed and illustrated with examples for growth of GaAs, ZnSe, and AlxGa1-xN. Gas-phase and surface reactions of organometallic arsenic compounds provide understanding of variation in carbon incorporation levels with precursor structure. Surface spectroscopy studies reveal the critical role of hydrogen-arsenic bonds in reducing carbon levels. MOCVD of ZnSe with different organoselenium compounds demonstrate that the growth rate behaves as expected from the Se-ligand bond strengths, but also that unexpected minor pathways can make a precursor unsuitable by causing increased carbon incorporation. Interactions between organometallic precursors mean that the structure of the precursors cannot be manipulated independently for the individual precursors, but must be considered in terms of the overall growth chemistry. The use of a single-source precursor, versus separate precursors for MOCVD of compound semiconductors is discussed and illustrated with data for the growth of AIN and GaN.



© EDP Sciences 1991