Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-225 - C2-232
DOI http://dx.doi.org/10.1051/jp4:1991228
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-225-C2-232

DOI: 10.1051/jp4:1991228

INFLUENCE OF H2 PARTIAL PRESSURE ON THE MORPHOLOGY AND CRYSTALLIZATION OF SiC LAYERS OBTAINED BY LPCVD USING TETRAMETHYLSILANE

A. FIGUERAS1, R. RODRIGUEZ-CLEMENTE1, S. GARELIK1, J. SANTISO1, B . ARMAS2, C. COMBESCURE2, A. MAZEL3, Y. KIHN3 and J. SÉVELY3

1  ICMAB-CSIC, Campus UAB, SP-08193 Bellaterra, Barcelona, Spain
2  IMP-CNRS, BP 5, F66520 Font Romeu, France
3  CEMES-LOE, CNRS, 29 rue J. Marvig, BP 4347, F-31055 Toulouse Cedex, France


Abstract
Silicon carbide layers have been produced by Chemical Vapor Deposition at low pressures (LPCVD) on graphite substrates from tetramethylsilane and hydrogen. The effects of change in partial pressure of hydrogen on the kinetics, morphology and structure of the layers have been examined. A model of the layer growth is developed.



© EDP Sciences 1991