Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-183 - C2-183
DOI http://dx.doi.org/10.1051/jp4:1991222
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-183-C2-183

DOI: 10.1051/jp4:1991222

IN SITU ELLIPSOMETRY, A MEASUREMENT TECHNIQUE FOR DYNAMIC FILM CHARACTERIZATION AND PROCESS DEVELOPMENT

M. TAMME, R. KAMILLI, P. PADUSCHEK, P. MONTGOMERY and S. ILLSLEY

PLASMOS GmbH, Prozesstechnik, Tegernseer Landstrasse 161, D-8000 Munich 90, Germany


Abstract
In situ ellipsometry enables "on line" continuous monitoring of film development within the deposition chamber. Furthermore in situ ellipsometry not only provides thickness monitoring, but is an excellent tool for determining refractive index and absorption coefficients. Advantages and disadvantages of in situ ellipsometry are shown and compared with other techniques. Examples of transparent PECVD film growth are shown as well as an example of a-Si as a highly absorbing film.



© EDP Sciences 1991