Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-167 - C2-173
DOI http://dx.doi.org/10.1051/jp4:1991220
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-167-C2-173

DOI: 10.1051/jp4:1991220

REFLECTION-ABSORPTION IR SPECTROSCOPY AS AN IN-SITU PROBE OF THE SURFACE CHEMISTRY OF SEMICONDUCTOR GROWTH INTERMEDIATES : THE ADSORPTION OF TRIMETHYLGALLIUM AT GaAs (100) SURFACES AT 300 K

H. PATEL and M.E. PEMBLE

Department of Chemistry and Centre for Electronic Materials, University of Manchester, Institute of Science and Technology, P.O. Box 88, Sackville St, GB-Manchester M60 1QD, Great-Britain


Abstract
FTIR spectroscopy has been used in reflection-absorption mode to monitor the adsorption of trimethylgallium (TMGa) at GaAs (100) surfaces at 300 K. Intense, positive going transmittance bands are observed, which confirm the theoretical prediction that the presence of an adsorbate layer at a semiconducting substrate which itself does not absorb the IR radiation, will result in a net increase in absolute IR reflectivity. Three bands are observed in the CH deformation region, at 1050 cm-l, 1174 cm-1 and 1420 cm-1. The latter two bands are shown to be consistent with the formation of a surface species in which the methyl groups are intact, although lack of data in the Ga-C region prevents an unambiguous assignment. These band positions together with their spectral intensities are shown to be consistent with the formation of a physisorbed TMGa species. However, the band at 1050 cm-1 is not consistent with this assignment. Some alternative modes of adsorption are discussed in the light of data for TMGa adsorption at Si surfaces. The data presented here are the first external reflection IR data available for possible III-V growth surface intermediates at GaAs (100) surfaces and indicate the potential of the reflection-absorption method for the detection of adsorbed species under real MOVPE and related growth conditions.



© EDP Sciences 1991