Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-953 - C2-960
DOI http://dx.doi.org/10.1051/jp4:19912115
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-953-C2-960

DOI: 10.1051/jp4:19912115

HETEROEPITAXIAL GROWTH OF TiO2, VO2, AND TiO2/VO2 MULTILAYERS BY MOCVD

H.L.M. CHANG, Y. GAO, J. GUO, C.M. FOSTER, H. YOU, T.J. ZHANG and D.J. LAM

Materials Science Division, Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439, U.S.A.


Abstract
Titanium and vanadium dioxide systems were selected to study the MOCVD process for the growth of oxide epitaxial films. Single-crystal TiO2 and VO2 films in single and multilayered configurations have been successfully grown on sapphire (α-Al2O3) single-crystal substrates. Seven distinct epitaxial orientation relationships between the films and the substrates were observed. Discussion on these epitaxial relationships based on the consideration of atomic arrangements of the materials is presented. From our experimental results, we concluded that single layer films (both TiO2 and VO2) were grown by the nucleations of three-dimensional clusters. Quantum mechanical calculations of the electronic structures, charge distributions, and energetics of the free substrate surfaces were performed and some results are presented.



© EDP Sciences 1991