Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-881 - C2-888
DOI http://dx.doi.org/10.1051/jp4:19912105
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-881-C2-888

DOI: 10.1051/jp4:19912105

CVD OF COPPER USING CuCl AS PRECURSOR

C. LAMPE-ÖNNERUD, A. HÅRSTA and U. JANSSON

Thin Film and Surface Chemistry Group, Department of Inorganic Chemistry, University of Uppsala, Box 531, S-751 21 Uppsala, Sweden


Abstract
Chemical vapour deposition of copper using CuCl as the copper precursor has been investigated. It was found that the evaporation of CuCl from a solid powder was a critical step. The evaporation process was strongly dependent on mainly two factors, deviations from equilibrium upon evaporation and formation of hydroxychloride on the powder surface. The copper deposition was investigated for two different gas mixtures, Ar/CuCl and Ar/CuCl/H2, and two different substrates, SiO2 and Si(111). On the SiO2 substrate, elemental Cu was deposited using an Ar/CuCl/H2 vapour. The resistivity of the Cu film was 3.3 µΩ.cm. When Si(111) substrates were employed, the Cu3Si phase was invariably obtained. This phase grew with an epitaxial relationship to the Si(111) substrate. At lower deposition temperatures or with H2 present in the vapour, elemental Cu in the form of particles was deposited on the Cu3Si layer. A relatively large amount of chlorine was detected on the surface of the Cu particles.



© EDP Sciences 1991